Si Electron Nano-Aspirator towards Emerging Hydro-Electronics

摘要

The electron nano-aspirator, which we have recently proposed and demonstrated, is a Si device with a T-shaped branch, and can enhance the MOS-transistor current by utilizing the hydrodynamic nature of electrons. Here, we present an investigation on the controllability of the device characteristics and discuss the performance improvement for the future development of low power circuits based on the electron hydrodynamics.