Electron-Phonon Scattering in Planar MOSFETs with NEGF

摘要

An approach to include elastic and inelastic electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is computationally manageable and applicable to planar MOSFETs has been developed. By reformulating the NEGF equations in terms of integrated transverse momentum modes, the computational burden has been significantly reduced. This allows treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is rigorously benchmarked against semiclassical Monte Carlo transport.