Study of Twin Ge FinFET Structure Non-Volatile Memory

摘要

A twin FinFET structure non-volatile memory with high mobility germanium channel (Twin Ge FinFET structure NVM) is demonstrated. An extrapolation of the memory window can achieve 10V of V_TH at 21V for 10^{-3s which is large enough for NVM application. And the memory window can be maintained at 1.5V after 103 P/E cycles. In the future, this novel twin Ge FinFET NVM give a new solution of embedded NVM for next-generation Ge-based FinFET MOSFET integrated circuit.}