Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses

摘要

This paper presents switching characteristics of Ni/HfO_x/p^{+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfO_x RRAM while step-like reset process is seen from 5 nm HfO_x RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfO_x layer has potential for application in neuromorphic computing system.}