RRAM DEVICES WITH EXTENDED SWITCHING LAYER AND METHODS OF FABRICATION

摘要

Approaches for integrating a switching layer that is continuous across an array of RRAM (RRAM) cells and the resulting structures, are described. In an example, a RRAM (RRAM) cell includes an RRAM device coupled to a conductive interconnect disposed in a dielectric layer above the substrate. An RRAM device includes a bottom electrode coupled to an oxygen exchange layer and a top electrode through a switching layer. The switching layer physically extends over the dielectric layer and the bottom electrodes associated with all RRAM devices in a given array. A dielectric spacer film is disposed on the sidewalls of the memory device extending from a lowermost portion of the oxygen exchange layer to the uppermost portion of the top electrode.