Control of dopant-induced quantum dots by channel geometry

摘要

As device dimensions are continuously scaled down, the discreteness of dopant distribution has a significant effect on conventional device operation and controllability. However, a new device concept emerged: a single dopant transistor. Recent reports have demonstrated the characteristics of single-electron transport through a single or a few isolated dopant(s) in an FET channel. It is, however, difficult to control the number and position of single dopants in nanoscale. Here, we show that the structure of dopant-induced quantum dot array can be controlled in FETs containing a large number of dopants by the channel geometry.