Tight-Binding Study of Size and Geometric Effects on Hole Effective Mass of Silicon Nanowires

摘要

The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m~* of [001] and [110] NWs on the {001} basal fape has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112) and (110) basal faces are favorable for p-channel devices because they have the smallest hole m~* and its value is very resistant to the variability of the width.