Lasing characteristics of 1.5 ?m GaInAsP ridge laser diode on directly bonded InP/Si substrate

摘要

The increasing usage and the future demand for the Si-based photonic devices will enable a trend of high level opto-electronic devices. we have established a new integration method for the monolithic integration of InP optical devices on the Si substrate. By this new integration method, we could obtain lasing characteristics on the directly bonded InP/Si substrate. We have already demonstrated the successful lasing operation of GaInAsP broad lasers on InP/Si substrate [1-2]. In this paper, we report the lasing characteristics of 1.5μm GaInAsP ridge laser diode on directly bonded InP/Si substrate.