Characteristics of Multi-Quantum-Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO_2/Si Substrate

摘要

The lasing characteristics of separate-confinement-heterostructure multi-quantum-well (SCH-MQW) laser diodes (LDs) grown on InP templates bonded to aSiO_2/Si substrate using the hydrophilic bonding method are investigated. Thelayers of the SCH seven-quantum-well-structured LD are grown by low-pressuremetal-organic vapor-phase epitaxy. After the pulsed power supply of a high-mesawaveguide is tested with a surface electrode structure, the LD grown on an InP/SiO_2/Si substrate is found to exhibit superior lasing characteristics compared toan LD grown on an InP/Si substrate, and the threshold current density isequivalent to that of a surface-electrode-structured LD grown on an InP substrate.The slope efficiency of the LD grown on the InP/SiO_2/Si substrate is comparedwith that of an LD grown on an InP/Si substrate.