X-band rectangular microstrip patch antenna on Si substrate using IC process

摘要

Rectangular microstrip Patch Antenna has been most popular and innovative topics among designers in recent years owing to easily implementable and availability of numerous analysis methods. It is having vast applications covering mobile to satellite communication. A rectangular microstrip patch antenna has been designed and developed on Si substrate suitable for RFIC circuits. The antenna design is carried out at 8.2GHz and fabricated on High resistivity Si substrate [1]. Design of Antenna on high dielectric constant substrate is advantageous in terms of small size and reduced weight, but tightly coupled filed in it causes less space radiation. Insulating thin layer of SiO2 is employed as base material over silicon to avoid formation of metal-semiconductor junction (Schottky Barrier). In this article design of microstrip patch using full wave simulation and analysis of measured results is discussed.