Pure and Al-doped SnO_2 thin films: Structural, morphological and electrical properties

摘要

Thin films of pure and 3% Al-doped nano-crystalline SnO2 were deposited by spin coating method on glass substrates. Structural, morphological and electrical properties of the deposited films were investigated. X-ray diffraction results confirmed the formation of tetragonal phase in the deposited films. Fourier transform infrared spectroscopy results confirmed the presence of Sn-O-Sn, and Sn-O bonding in the deposited films. Addition of Al to SnO2, leads to shift in vibrational modes due to smaller radius of dopant moiety. Field emission scanning electron microscopy results depicted that with Al-doping the average particle size reduced as compared to pure sample. An increase in electrical current was observed with addition of dopant material than pure sample.