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Novel Route to Fabericate Graphene Oxide Quantum Dots (GOQDs) and Graphene Quantum Dots (GQDs)

机译:用于锻造石墨烯氧化物量子点(GOQDS)和石墨烯量子点(GQD)的新途径

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The unique structure of monolayered graphene composed of a one-atom thick two-dimensional crystal of sp2 carbon atoms arranged in a honeycomb lattice has been attributed to its extraordinary electronic properties such as high intrinsic mobility, and excellent thermal and electrical conductivity. Those characteristics of graphene have led to extensive applications in the fields of electronic devices, including photovoltaic cells, ultracapacitors and flexible touch screens. [1-2] In addition to the superlative electronic properties, recent studies have demonstrated the graphene’s photo luminescent characteristics, which can expand its application area in optical related fields. [3-5] The photoluminescence (PL) property of graphene is derived by controlling the zero-band gap of graphene. [6] Since the band gap can be tuned by the size, shape, and fraction of the sp2 domains in the sp3 matrix, a variety of graphene derivatives were explored as PL graphene moieties. [7] As an initial endeavor, the optical property of graphene oxide (GO), which is chemically prepared using the modified hummers method from graphite powders, was investigated. The produced GO, which ranged from a few tens of nanometers to several tens of micrometers in the lateral dimension, contained various shapes and nanosized sp2 carbon domains localized by the sp3 carbon structures, resulting in semiconductive and PL properties. [8]
机译:由布置在蜂窝晶格中的SP2碳原子的单原子厚二维晶体组成的单层石墨烯的独特结构已经归因于其非凡的电子性质,例如高本质迁移率和优异的热和导电性。石墨烯的那些特征导致了电子设备领域的广泛应用,包括光伏电池,超容器和柔性触摸屏。 [1-2]除了高级电子特性外,最近的研究表明石墨烯的光发光特性,可以扩展其在光学相关领域的应用区域。 [3-5]通过控制石墨烯的零带差距来推导石墨烯的光致发光(PL)性质。由于带隙可以通过SP3基质中SP2结构域的尺寸,形状和分数调节,因此探索各种石墨烯衍生物作为PL石墨烯部分。 [7]作为初始努力,研究了石墨烯(GO)的光学性质,其使用来自石墨粉末的改性拔液方法化学制备。所产生的GO,其范围为几十纳米到横向尺寸的几十微米,含有由SP3碳结构定位的各种形状和纳米SP2碳结构,导致半导体和PL度。 [8]

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