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Structure transformation of ZnO thin films properties influenced by substrate temperature deposited by magnetron sputtering

机译:磁控溅射沉积底物温度影响的ZnO薄膜特性的结构变换

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The structure transformation of ZnO thin films properties influenced by substrate temperature deposited by RF Magnetron Sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation substrate temperature at 200°C∼500°C on the ZnO thin films have been investigated. The thin films were examined using two point probe current-voltage (I-V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emmision scanning electron microscopy (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). ZnO thin films were prepared at 200 watt by a RF magnetron sputtering using ZnO target using glass as the substrate. The IV measurement indicated as the substrate temperature increase, the conductivity of ZnO thin film increase. All films have show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about (<8nm) was measured using AFM. The image form FESEM observed that transformation of structure started to change at high temperature (400∼500°C).
机译:提出了由RF磁控溅射沉积的衬底温度影响的ZnO薄膜特性的结构转化。该项目专注于ZnO薄膜的电气,光学和结构性。研究了ZnO薄膜上200℃〜500℃的变化衬底温度的影响。使用两点探针电流 - 电压(IV)测量(Keithley 2400),UV-Vis-Nir分光光度计,现场Emmision扫描电子显微镜(FeSEM)(JEOL JSM 7600F)和原子力显微镜(AFM)进行检查薄膜系统XE-100)。使用玻璃作为基材,通过使用ZnO靶的RF磁控溅射以200瓦制备ZnO薄膜。表示作为衬底温度的IV测量,ZnO薄膜的电导率增加。所有薄膜使用UV-Vis分光光度计(JASCO 670)显示出高UV吸收性能。使用AFM测量ZnO薄膜的根部平均方形(RMS)粗糙度约(<8nm)。图像形式FeSEM观察到结构的转化在高温(400〜500°C)时开始变化。

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