CHARGING-DAMAGE-FREE AND PRECISE DIELECTRIC ETCHING IN PULSED C{sub}2F{sub}4/CF{sub}3I PLASMA

摘要

Charging-damage- free f 0.05-mm SiO{sub}2 contact etching in a pulsed C{sub}2F{sub}4/CF{sub}3I plasma has been successfully done. The SiO{sub}2 etching rate in C{sub}2F{sub}4/CF{sub}3I pulsed plasma did not decrease even for the pulse-OFF time of 20 μsec due to the enhancement of etching by the negative ions. Using the pulsed C{sub}2F{sub}4/CF{sub}3I plasma, the Φ 0.05-μm SiO{sub}2 contact etching without damage because the negative ions in the pulsed C{sub}2F{sub}4/CF{sub}3I plasma reduced the accumulating charge on the substrate. These results imply that the negative ions generated in C{sub}2F{sub}4/CF{sub}3I plasma are very effective for charge- free and precise SiO{sub}2 etching.