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Surface Microstructure of Monocrystalline Silicon Anisotropically Etched with Sodium Carbonate and Sodium Bicarbonate Solutions

机译:用碳酸钠和碳酸氢钠溶液各向异性蚀刻单晶硅的表面微观结构

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The surface microstructure fabrication of monocrystalline silicon by anisotropic etching with sodium carbonate and sodium bicarbonate solutions have been studied in this paper. The microstructure fabrication process has been evaluated in terms of the surface morphology size, etching condition and uniformity. The experiments show that with the solution temperature changing, the average size of microstructure varies from 0.62 μm to 1.42 μm. Similarly, with the etching time increasing from 10 min to 40 min, the average size of microstructure varies from 0.62 μm to 1.12 μm. On the basis of our experiments, it is concluded that the optimized condition is 24 wt% Na_2CO_3, 4 wt% NaHCO_3, 90°C and 30 min. Under optimum conditions, the silicon wafers surface exhibit a lower average size of 0.62 μm and the microstructures are uniform and continuous. It is hoped that it may lead to an increase in the microfabrication of manufacturing industry. Therefore, this promising technique provides an alternative way for the microstructure fabrication of monocrystalline silicon in the industrial production.
机译:本文研究了通过各向异性蚀刻通过各向异性蚀刻通过碳酸钠和碳酸氢钠溶液进行各向异性蚀刻的表面微观结构。在表面形态尺寸,蚀刻条件和均匀性方面已经评估了微观结构制造工艺。实验表明,随着溶液温度变化,微观结构的平均尺寸为0.62μm至1.42μm。类似地,随着从10分钟到40分钟的蚀刻时间增加,微结构的平均尺寸为0.62μm至1.12μm。在我们的实验的基础上,得出结论,优化的条件为24wt%Na_2CO_3,4wt%NaHCO_3,90℃和30分钟。在最佳条件下,硅晶片表面表现出较低的平均尺寸为0.62μm,微观结构是均匀的和连续的。希望它可能导致制造业的微制造增加。因此,该有希望的技术为工业生产中单晶硅的微观结构制造提供了一种替代方法。

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