Dielectric Relaxation and Reliability of Al_2O_3-HfO_2-Al_2O_3 Sandwiched Metal-Insulator-Metal (MIM) Capacitor

摘要

In this paper, dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitor using Al_2O_3-HfO_2-Al_2O_3 sandwiched structure were analyzed. It is shown that multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature. The dielectric relaxation voltage shows little dependence on the capacitor area. The capacitance density (C_0) increases and quadratic voltage coefficient (α) decreases as a function of stress time under constant voltage stress (CVS) because of the charge trapping effect in the high-k dielectric.