FABRICATION OF ZAO CERAMIC TARGET AND EFFECT ON THE PHOTOELECTRIC PROPERTIES OF ITS FILM

摘要

ZAO ceramic target was fabricated by cold isotatic pressing and pressureless sintering ZAO powder used method of homogeneous precipitation. Then, ZAO film was deposited by RF magnetron sputtering of the lab-made ZAO target. The microstructures and phases of ZAO target and its film were characterized by scanning electron microscopy (SEM), energy dispersion spectroscopy (EDS), and X-ray diffraction apparatus. Results show that the relative density of the target is above 93%, and there are the second phase ZnAl_2O_4 in ZnO crystal boundary. ZAO films with resistivity 1.083×10~(-3) Ω·cm and visible light transmittance beyond 85% were obtained by the target.