Magnetic Resonance Investigation of Zn_(1-x)Fe_xO Properties Influenced by Annealing Atmosphere

摘要

ZnO is an attractive system for a wide variety of practical applications, being a chemically stable oxide semiconductor. It has been shown that Fe doping produces ferromagnetic semiconductor at room temperature. This material, therefore, has the potential for use in spintronic devices such as spin transistors, spin light emitting diodes, very high density nonvolatile semiconductor memory and optical emitters. It is believed that oxygen vacancies and substitutional incorporation are important to produce ferromagnetism in semiconductor oxide doped with transition metal ions. The present paper reports detailed electron paramagnetic resonance investigations (EPR) of the samples in order to investigate how annealing atmosphere (Air and Argon) influenced the magnetic behavior of the samples. X-band electron paramagnetic resonance (EPR) studies of Fe~(3+) ions in Zn_(1-x)Fe_xO powders with x = 1%, 3% is reported. These samples are interesting to investigate as Fe doping produce ferromagnetism in ZnO, making a promising ferromagnetic semiconductor at room temperature.