Selective Growth Of Strained Ge Channel On Relaxed SiGe Buffer In Shallow Trench Isolation For High Mobility Ge Planar And Fin p-FET

摘要

Strained Ge channels on SiGe strain relaxed buffer are grown selectively in active areas surrounded by Shallow Trench Isolations. Using advanced Reduced Pressure Chemical Vapor Deposition techniques, more than 2GPa stress was implemented for enhancing mobility in future Ge planar p-Field Effect Transistors (using a Si_(0.5)Ge_(0.5) buffer layer) and in Ge p-FinFET(using a Si_(0.28)Ge_(0.72) buffer layer) channels. The approach proposed can be co-integrated with Si or IIIV nFET channel processing.