Using aerial image simulation, the difference between the impacts caused by the same size bump phase defect and pit phase defect on 22 nm ～ 16 nm L&S projected patterns were analyzed. Phase defect printability for hp 26 nm ～ 22 nm line patterns was evaluated by exposure experiments and dependency of phase defect size and location was investigated. We have started a study of mask observation technique using magnifying optics. EUV microscope images can predict the existence of phase defect and a degree of its impact as an intensity variation of the images.
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