A novel dry etching process for reducing defects of EUVL photomask - (PPT)

摘要

Small defect free novel dry etching process for EUVL photomask was developed and shown advanced etch-bias uniformity. The concept of controlling the electrostatic force of the particle's motion in plasma is effective to reduce defects. New small defect seemed to come from its blank, we are trying to analyze composition of the blank's small defects.