InGaAs Quantum Well Nanoneedles on Silicon with Long Wavelength Emission for Silicon Transparency

摘要

We report novel single-crystalline wurtzite InGaAs/GaAs core-shell quantum well nanoneedles with photoluminescence below the 1.12 eV silicon bandgap, grown on GaAs or Si. This long wavelength enables integration with silicon waveguides and CMOS devices.