Indium solderbumps are usually used in interconnection between focal plane arrays (FPAs) and Si read out integrated circuits (ROICs) by flip-chip bonding. The fabrication of indium bump array is a critical technology in this process. In this paper, the 16×16 indium bump array was fabricated by electroplating method. The indium bump is 100μm in pitch and 40μm in diameter. Lift-off method and IBE process were adopted to try to remove the seed layer. Ti/Pt/Au(200 Å/300 Å/800Å) by sputtering method and Ti/Pt/Au/ep Au(200 Å/300 Å/800Å/3–4μm) by electroplating after sputtering were investigated as UBM (under bump metallization) of indium bump. The reliability of indium bumps with different UBM was evaluated by cross-section analysis and shear test.
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机译：铟焊接通常用于通过倒装芯片键合的焦平面阵列（FPAS）和SI读出集成电路（ROICS）之间的互连。铟凸块阵列的制造是该过程中的关键技术。本文通过电镀方法制造了16×16铟凸块阵列。铟凸块为100μm，直径为40μm。采用剥离方法和IBE过程来尝试去除种子层。通过溅射在溅射后通过溅射方法和Ti / Pt / Au / Ep Au（200Å/300Å/800Å/3-4μm）作为UBM（在凹凸下金属化）铟凸块。通过横截面分析和剪切试验评估具有不同UBM的铟凸块的可靠性。
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