Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults

摘要

To investigate effect of stacking faults (SFs) on switching reliability, we carried out switching tests using SiC-MOSFETs containing expanded SFs, Before the switching test, current stress was applied to the internal body-diode devices under test (DUTs) to expand SFs. The circuit configuration of the switching test we used was a half-bridge type and a double-pulse gate signal was applied to the lower arm DUT. The switching-voltage was 1.8kV and switching-current increased in about 8A steps to breakdown. Reverse recovery safety operation area (RRSOA) breakdown switching-current decreased dependently on the degree of SiC-MOSFET degradation. Reverse bias SOA (RBSOA) did not decrease even if degraded SiC-MOSFETs were used.