Electrical and Microstructural Characterization of Narrow Cu Interconnects

摘要

The electrical resistivity and microstructure of narrow lines down to 90 nm are studied in a large temperature range (4 - 400 K). It is shown that the observed behavior can be interpreted in terms of the Mayadas-Shatzkes model and that surface scattering gives a negligible contribution for these dimensions at room temperature. The size effect observed for these lines originates from a reduction of grain sizes in narrow lines.