Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions

摘要

The prevention of metallic contamination is an important issue in the semiconductor industry because of its harmfull impact on devices.Particularly,eliminating Cu contaminants is essential to preserve the materials integrity.It is all the more important when wafers are repetitively processed in a reclaim industry.Then,Cu must be efficiently removed from the wafers' back-sides and front-sides to avoid any cross-contamination.Dilute HF solutions are most commonly used to remove metallic contaminants [1].However,copper deposition is influenced by the pH and the redox-potential of the solution [2].