Negative dynamic Ron in AlGaN/GaN power devices

摘要

Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic R are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.