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Methods Comparison for the Synthesis of Deca-dodecasil 3 Rhombohedral (DDR3) Zeolite Crystals

机译:方法比较Deca-Dodecasil 3菱形(DDR3)沸石晶体的合成

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In the present work, DDR3 zeolite crystals were synthesized using two different methods. The silica sources used to synthesize DDR3 crystals were tetramethoxysilane (TMOS) and Ludox-40. The resultant samples were characterized using X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FESEM). The XRD results showed that the peaks representing DDR3 structure were not obtained for the sample synthesized in 5 days at room temperature with ultrasonic pre-treatment of 3h using Ludox-40 as silica source. On the other hand, the XRD pattern obtained for the sample synthesized in 25 days at 160°C using TMOS as a silica source were similar with the XRD peaks reported in the literature. From these results, it can be concluded that the synthesis conditions of 25 days at 160°C using TMOS as silica source were the favorable conditions in obtaining DDR3 crystal structure.
机译:在本作工作中,使用两种不同的方法合成DDR3沸石晶体。用于合成DDR3晶体的二氧化硅来源是四甲氧基硅烷(TMOS)和Ludox-40。使用X射线衍射(XRD)和场发射扫描电子显微镜(FESEM)表征所得样品。 XRD结果表明,在室温下在室温下在5天内合成的样品,使用Ludox-40作为二氧化硅源的超声预处理,未获得所代表DDR3结构的峰。另一方面,使用TMOS作为二氧化硅源在160℃下在25天内合成的样品获得的XRD图案与文献中报道的XRD峰相似。从这些结果可以得出结论,在160℃使用TMOS作为二氧化硅源的合成条件是获得DDR3晶体结构的有利条件。

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