Fabrication of Intrinsic Zinc Oxide-Coated, Aluminium-Doped Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors

摘要

Fabrication and performance of metal-semiconductor-metal (MSM)–type intrinsic zinc oxide (ZnO)-coated, aluminium (Al)-doped ZnO nanorod array-based ultraviolet photoconductive sensors were reported and discussed. The Al-doped ZnO nanorod arrays were prepared using sonicated sol-gel immersion method. The coating process of intrinsic ZnO onto Al-doped ZnO nanorod arrays was performed using radio-frequency (RF) magnetron sputtering at different deposition times varying from 0 to 10 min. We observed that responsivity of the sensors decreased with increasing intrinsic ZnO deposition time, decreasing from 4.81 A/W without coating to 1.37 A/W after 10 min of coating. Interestingly, the sensitivity of the sensors improved with intrinsic ZnO coating, having a maximum value of 19.0 after 1 min coating.