首页> 外文会议>Annual Conference on Magnetism Magnetic Materials >Spin scattering asymmetric coefficients and enhanced specific interfacial resistance of fully epitaxial current-perpendicular-to-plane giant magnetoresistance spin valves using alternate monatomic layered Fe/Co_n and a Ag spacer layer
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Spin scattering asymmetric coefficients and enhanced specific interfacial resistance of fully epitaxial current-perpendicular-to-plane giant magnetoresistance spin valves using alternate monatomic layered Fe/Co_n and a Ag spacer layer

机译:使用替代原料层状Fe / Co _N和Ag间隔层,旋转散射不对称系数和增强的完全外延垂直与面对平面磁阻旋转阀的特异性界面电阻

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Using current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) measurement, we have evaluated the bulk and interface spin scattering asymmetric coefficients, specific interfacial resistance, AR_(F/N), for exchange-biased spin-valves consisting of artificially ordered B2 structure Fe_(50)Co_(50) and Ag spacer layer. Artificially epitaxial ordered Fe_(50)Co_(50) superlattices have been successfully fabricated on MgO (001) substrate by alternate monatomic layer (AML) deposition at a substrate temperature of 75 °C. The structural properties of the full epitaxial trilayer, AML[Fe/Co]_n/Ag/AML[Fe/Co]_n, on the Ag electrode have been confirmed by in situ reflection high-energy electron diffraction and transmission electron diffraction microscopy.
机译:使用电流垂直到平面(CPP)巨磁阻(GMR)测量,我们已经评估了散装和界面旋转散射不对称系数,特定的界面电阻,AR_(F / N),用于组成的交换偏置旋转阀人工有序的B2结构Fe_(50)CO_(50)和Ag间隔层。人工外延有序Fe_(50)CO_(50)在MgO(001)衬底上通过替代的原料层(AML)沉积在75℃的底物温度下成功地制造过晶片。通过原位反射高能电子衍射和透射电子衍射显微镜证实了AG电极上的全外延三叶层AML [Fe / CO] _N / AG / AML [Fe / Co] _N的结构性能。

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