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首页> 外文期刊>IEEE Transactions on Magnetics >Current-Perpendicular-to-Plane Giant Magnetoresistance in Pseudo Spin Valves With $hbox{Co}_{2}hbox{Fe}(hbox{Ge}_{0.5}hbox{Ga}_{0.5})$ Heusler Alloy Ferromagnetic Layers and Cu/Ag Spacer
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Current-Perpendicular-to-Plane Giant Magnetoresistance in Pseudo Spin Valves With $hbox{Co}_{2}hbox{Fe}(hbox{Ge}_{0.5}hbox{Ga}_{0.5})$ Heusler Alloy Ferromagnetic Layers and Cu/Ag Spacer

机译:具有$ hbox {Co} _ {2} hbox {Fe}(hbox {Ge} _ {0.5} hbox {Ga} _ {0.5})$ Heusler合金铁磁层的伪自旋阀中的电流垂直于平面的巨磁电阻和铜/银间隔物

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摘要

We studied the transport properties and micro-structure of current-perpendicular-to-plane pseudo spin valves (PSVs) with ferromagnetic ${rm Co}_{2}{rm Fe}({rm Ge}_{0.5}{rm Ga}_{0.5})$ (CFGG) Heusler alloy layers and a Cu or Ag spacer. The CFGG/Cu/CFGG PSVs showed an optimum annealing temperature at 300 $^{circ}{rm C}$, which is substantially lower than 500$^{circ}{rm C}$ for CFGG/Ag/CFGG PSVs. The Valet-Fert analysis yielded comparable interfacial spin asymmetries in CFGG/Cu (or Ag)/CFGG PSVs, which indicates that the Cu spacer has as good a band matching as that of the Ag spacer with the CFGG Heusler alloy. However, transmission electron microscopy observation revealed that the CFGG/Cu/CFGG tri-layered structure is thermally unstable compared to the CFGG/Ag/CFGG tri-layered structure, thus placing a limit on the annealing temperature for producing higher magnetoresistance output by using the Cu spacer.
机译:我们研究了具有铁磁 $ {rm Co} _ {2}的电流垂直于平面的伪自旋阀(PSV)的传输性质和微观结构。 {rm Fe}({rm Ge} _ {0.5} {rm Ga} _ {0.5})$ $ ^ {circ} {rm C} $ 处显示最佳退火温度,大大低于CFGG / Ag / CFGG PSV的500 $ ^ {circ} {rm C} $ 。 Valet-Fert分析在CFGG / Cu(或Ag)/ CFGG PSV中产生了可比的界面自旋不对称性,这表明Cu间隔基的带匹配度与Ag间隔基与CFGG Heusler合金的匹配度一样好。然而,透射电子显微镜观察表明,与CFGG / Ag / CFGG三层结构相比,CFGG / Cu / CFGG三层结构在热上是不稳定的,因此限制了退火温度的限制,以通过使用该方法产生更高的磁阻输出。铜垫片。

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