NARROW BANDGAP GaSb AND InGaAsSb/GaSb BASED CELLS FOR MECHANICALLY STACKED TANDEMS AND TPV CONVERTERS

摘要

In this work, LPE growth of GaSb and InGaAsSb and Zn-diffusion techniques were applied for manufacturing the mechanically stacked solar cells and TPV cells. GaSb layers grown by the LPE technique and doped with tellurium were investigated for growth temperatures 520°C and 400°C. These layers were used for formation of PV cells. The maximum efficiency of 6 % has been achieved for GaSb cells behind GaAs top cell at concentration ratio of 100-200 suns, and 5.2% behind a top double-junction GaInP/GaInAs cell with GaAs substrate of 250μm in thickness. Efficiency of 19% was measured in GaSb TPV cells illuminated by solar powered tungsten emitter.