Development of Ultra Thin P-type Microcrystalline Silicon with High Conductivity and High Crystalline Volume by RF-PECVD at High Pressure

摘要

In order to offer potential solutions to problems such as the TCO degradation and low deposition rate in conventional RF-PECVD with low pressure, highly conductive boron-doped p-type μc-Si:H films were obtained by PECVD with relatively high pressure and relatively high power densities in this paper. By studying the variation of microstructure and electrical properties under various deposition parameters, optimized deposition conditions were obtained to fabricate 30～50nm thick p-type μc-Si:H films with both high crystalline volume and high conductivity. The best p-type μc-Si:H film with thickness of 33nm, high dark-conductivity of 1.81S/cm, low active energy of 25meV and high crystalline volume of 57% has been obtained. The p-type μc-Si:H films with various crystalline fraction volume have been used in single-junction μc-Si:H solar cells. The results indicated that highly crystalline p-layers play a very important role in reducing the thickness of incubation layer and it could improve the performance of μc-Si:H solar cells.