首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >DESIGN AND FABRICATION OF MULTI-DEGREES-OF-FREEDOM SINGLE CRYSTAL SILICON MOVEABLE PLATFORMS ON SOI WAFER
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DESIGN AND FABRICATION OF MULTI-DEGREES-OF-FREEDOM SINGLE CRYSTAL SILICON MOVEABLE PLATFORMS ON SOI WAFER

机译:SOI晶圆上多程度自由度单晶硅可移动平台的设计和制造

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This study has developed various out-of-plane springs and actuators on SOI wafer using the DAWN process. Further, the integration of these out-of-plane components with the existing in-plane components is also demonstrated. Thus, various multi-degrees-of-freedom (DOF) movable platforms made of single-crystal-silicon (SCS) are implemented on a SOI wafer. In short, the platforms moveable in in-plane/out-of-plane directions; and the linear/angular motions can be achieved. The movable platforms can be driven by several different mechanisms, such as electrothermal or electrostatic actuators. In applications, four movable platforms with 2~3 DOF on SOI wafer are demonstrated.
机译:本研究在SOI晶圆上开发了各种平面外弹簧和致动器,使用黎明工艺。此外,还证明了与现有的面内分量的平面外部件的整合。因此,在SOI晶片上实现由单晶硅(SCS)制成的各种多程度(DOF)可移动平台。简而言之,平台可在平面内/外平面方向上移动;并且可以实现线性/角度运动。可移动平台可以由几种不同的机构驱动,例如电热或静电致动器。在应用中,对SOI晶片上有四个具有2〜3 DOF的可移动平台。

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