High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film

摘要

A reactor cleaning technique for the silicon carbide (SiC) chemical vapor deposition (CVD) method has been developed using chlorine trifluoride (CIF3) gas. The purified pyrolytic carbon film was studied as the improved coating film of the susceptor. At the temperatures up to 570 °C, the purified pyrolytic carbon film could have no serious damage after the exposure to the CIF3 gas, to enable the high temperature and high speed cleaning.