INFLUENCE OF BORON DOPING ON THE CONDUCTIVITY OF AMORPHOUS SILICON FILM AND ON THE PHOTOVOLTAIC EFFICIENCY OF SOLAR CELL

摘要

The conductivity of amorphous silicon film prepared by the plasma enhanced chemical vapor deposition (PECVD) has been investigated. With increasing B/Si from 1.2% to 1.6%, the conductivity of the amorphous silicon film has a great increase from 10~(-5) s/cm to 10~(-1) s/cm, followed by a slow increase. However with the further increasing B/Si from 2.0%, the conductivity of the amorphous silicon film has a fast decrease. Two solar cells have been made from amorphous silicon film as p-layer that B/Si are 1.2% and 2.4%, respectively. The photovoltaic efficiency of the solar cells has been investigated. The result shows that the photovoltaic efficiency of solar cell, which B/Si is 2.4%, is prior to the other. The effect of different B/Si on photovoltaic efficiency of solar cell has been discussed.