Manufacture of monocrystalline or polycrystalline n-silicon-based solar cell involves applying boron-containing compound on silicon wafer, doping in presence of pulsed laser having specified wavelength, and forming boron-doped emitter

摘要

Manufacture of monocrystalline or polycrystalline n-silicon-based solar cells involves applying boron-containing compound on a silicon n-type wafer, doping in presence of pulsed laser having wavelength of 150-400 nm and pulse length of 100-400 ns, and forming boron-doped p+-type emitter.