GaInNP MQW structure LED grown by laser-assisted MOCVD

摘要

We tried to fabricate a quaternary N-rich GaInNP multiple quantum well (MQW) structure to obtain a blighter emission of a LED. The GaInNP was grown using laser-assisted metalorganic chemical vapor deposition (LAMOCVD). The growth temperature was 950 °C. A pulsed ArF (193 nm) was also applied for the growth. The laser power was 0.1 J x 100 Hz. A sapphire substrate was used for the growth. A p-GaN/ (undoped GaN/GaInNP, 3 pair)/n-GaN/GaN buffer/sapphire structure was grown using LAMOCVD. A GaInNP MQW structure LED was fabricated. Pt/Au was used for a p-electrode and Al/Ti/Au was used for an n-electrode. The electroluminescence (EL) of the LED was measured. Sharp and bright 435 nm emissions were obtained. The EL intensity of a GaInNP MQW LED was stronger than that of a GaNP single quantum well (SQW) LED. A GaInNP MQW-structure LED was thus demonstrated for the first time.