Preferential In-N bond formation in InGaAsN layers

摘要

Systematic Raman scattering characterization for RF-MBE grown InGaAsN layers has been performed to investigate the preferential In-N bond formation. The present Raman results strongly indicate that the isolated In-N bonds have been preferentially formed mainly in the In-rich regions and that the growth temperature and the post-growth anneal cause some changes in the In-N bond formation in the InGaAsN layers.