Effects of Al composition on luminescence properties of europium implanted Al_xGa_(1-x)N (0 ≤ x ≤ 1)

摘要

Europium (Eu) ions are introduced into Al_xGa_(1-x)N (0 ≤ x ≤ 1) by implantation to investigate the effect of Al composition on the luminescence properties. For all samples with Al contents between 0 and 100%, strong and sharp red emission peaks related to the 4f-4f intra transitions of Eu~(3+) are observed around 600 ～ 660 nm at room temperature. The intensity of the Eu~(3+)-related luminescence increases with increasing Al contents, and the photoluminescence of ~5D_0-~7F_2 transition related to Eu~(3+) shows strongest intensity at Al = 50%. The intensity is 100 times stronger than that of Eu in GaN, and several times stronger than that of near-band-edge emission for un-doped GaN. These results suggest that the luminescence property of Eu~(3+) can be dramatically improved by using Al_(0.5)Ga_(0.5)N as a host material.