Structure Control of Ferroelectric PbTiO{sub}3 Thin Films using SrTiO{sub}3 Buffer Layer Prepared by Metalorganic Decomposition

摘要

Polycrystalline PbTiO{sub}3 thin films were successfully formed on SrTiO{sub}3 buffer layer by metalorganic decomposition (MOD) technique. The PbTiO{sub}3 films showed the perovskite structure after annealing at 700°C for 30 min in N{sub}2 ambient. A higher dielectric constant of 157 is obtained in the PbTiO{sub}3/SrTiO{sub}3/Si structure. The hysteresis loop in the capacitance-voltage curves of the MFIS configration indicated a memory window of 1.2 V with a programming voltage swing of ±5 V due to polarization effect. The memory window will satisfy the practical application of the MFIS-FET memories operating at low voltage in future ULSIs.