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Response of EBT3 Gafchromic Films Exposed to High Energy Electrons

机译:EBT3 Gafchromic薄膜暴露于高能电子的响应

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摘要

The optical density as a function of dose and the energy dependence of EBT3 Gafchromic films were determined using electron beams with energies from 6 to 22 MeV. The films were scanned and separated into RGB channels. The red channel optical density is independent of energy in a range of 2-10 Gy for dose in water.
机译:用电磁束从6至22meV的能量确定光学密度和EBT3 Gafchromic膜的能量依赖性的光学密度。将薄膜扫描并分成RGB通道。红色通道光密度与水中剂量为2-10gy的能量无关。

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