Direct comparison of structural and electrical properties of epitaxial (001)-, (116)-, and (103)-oriented SrBi{sub}2Ta{sub}2O{sub}9 thin film on SrTiO{sub}3 and silicon substrates

摘要

Anisotropies of the properties of the bismuth-layered perovskite SrBi{sub}2Ta{sub}2O{sub}9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO{sub}3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)‖STO(001); SBT[110]‖STO[100] can be applied to all SBT thin films on STO substrates of(00l), (Oil), and (ill) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, white the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (t 16) orientation were also grown on silicon substrates for the first time. They went deposited on Si(100) covered with a conducting SrRuO{sub}3 (110) bottom electrode on a YSZ(100) buffer layer.