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Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions

机译：P-N Algaas / Gaas异性金的雪崩细分

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Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions is investigated, and the maximum electric field, the breakdown voltage, and the depletion-layer width are calculated as functions of the AlAs composition in AlGaAs and of the doping densities on both sides of the junction. The model employed is an extension of Hauser's model of homojunction breakdown.

机译：研究了P-N AlGaAs / GaAs异质函数的雪崩击穿，并且最大电场，击穿电压和耗尽层宽度被计算为AlGaAs中的ALAS组成和交叉点两侧的掺杂密度的功能。所用的模型是Hauser的同性界故障模型的延伸。

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《Pulsed Power Conference》|1989年||共4页
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Myles C.W.; Gundersen M.A.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. The interdependence between the collapse phenomenon and the avalanche breakdown in AlGaAs/GaAs power heterojunction bipolar transistors [J] . Liu W. IEEE Transactions on Electron Devices . 1995,第4期

机译：AlGaAs / GaAs功率异质结双极晶体管的崩溃现象与雪崩击穿之间的相互依赖性
2. High-frequency breakdown of the integer quantum Hall effect in GaAs/AlGaAs heterojunctions [J] . Dziom V, Shuvaev A., Shchepetilnikov A. V, Physical review. B, Condensed Matter And Materals Physics . 2019,第4期

机译：GaAs / AlGaAs异质结中整数量子霍尔效应的高频击穿
3. High-frequency breakdown of the integer quantum Hall effect in GaAs/AlGaAs heterojunctions [J] . Dziom V, Shuvaev A., Shchepetilnikov A. V, Physical review. B, Condensed Matter And Materals Physics . 2019,第4期

机译：GaAs / Algaas杂交中整数Quantum Hall效应的高频故障
4. Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions [C] . Myles C.W., Gundersen M.A., Jung H. Hur 1999 IEEE International Conference on Communications . 1999

机译：p-n AlGaAs / GaAs异质结中的雪崩击穿
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions [O] . Yao Wu, Xin Yan, Wei Wei, 2018

机译：AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
7. Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors [O] . Yan BP, Wang H, Ng GI 2000

机译：alGaas / InGaas p-n-p异质结双极晶体管中的雪崩倍增和电离系数
8. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor [R] . Chang, P. C. , Baca, A. G. , Li, N. Y. , 2000

机译：alGaas / InGaasN / Gaas pnp双异质结双极晶体管

Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions

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