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Growth and characterization of ferromagnetic Fe-doped GaSb quantum dots with high Curie temperature

机译:具有高居里温度的铁磁Fe掺杂Gasb量子点的生长和表征

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Semiconductor quantum dots (QDs) have been extensively studied because of their potential to be used in devices such as highly efficient semiconductor lasers or qubits for quantum computation. Furthermore, it is expected that the low-dimensional confinement of carriers in ferromagnetic QDs allows a highly effective gate-voltage control of their magnetic properties and Curie temperature (TC)1. Another possible application of ferromagnetic QDs is single electron spin transistors (SEST)2 which provide a building block for reconfigurable logic circuits that have extremely low-power consumption. For these applications, ferromagnetic QDs with high TC and good compatibility with semiconductor platforms are essential. Ferromagnetic semiconductors such as (Ge,Fe)Sb3 are good candidates.
机译:已经广泛地研究了半导体量子点(QDS),因为它们在诸如高效半导体激光器或用于量子计算的Qubits的设备中使用的电位。此外,预期铁磁QD中载流子的低维限制允许其磁性和居里温度(Tc)1的高效栅极控制。铁磁QD的另一种可能的施加是单电子自旋晶体管(最初)2,其为可重构逻辑电路提供具有极低功耗的可重构逻辑电路的构建块。对于这些应用,具有高Tc和与半导体平台良好兼容性的铁磁QD是必不可少的。诸如(GE,Fe)SB3的铁磁半导体是良好的候选者。

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