InAs/GaAs Trilayer Quantum Dots with Long-wavelength Emission

摘要

As a candidate for extending the emission wavelength of InAs quantum dots (QDs) from well-developed O-band to C-band, bilayer InAs QDs have attracted much attention.Although QD lasers were reported based on bilayer structure, the lasing wavelength was not over 1.5 μm.To achieve a longer emission wavelength, a new structure called the trilayer structure is designed. In this report, we demonstrated 1.39 μm emission from InAs trilayer QDs which was longer than ones from bilayer QDs at room temperature (RT).