Analysis of the Performances of AlGaN/GaN Heterojunction FETs in Different Temperatures

摘要

As the representative of third-generation semiconductor, GaN has been developed rapidly in high temperature and high frequency area in recent years because of its outstanding performance [6]. Although it was not used widely, the characteristics of GaN should be concluded for the further research and realistic application. AlGaN/GaN heterojunction field-effect transistor (HFET) is one of the innovations of the GaN application. This article reviews the characteristics of HFETs in three direction: one is the characteristics of 2DEG in AlGaN/GaN HFETs, second is the basic structure and operation principle of HFETs, the last one is the temperature dependence of AlGaN/GaN HFETs. Based on the software simulation and real data from the former experiments, this paper analyzes the basic characteristics of HFETs.