机译:通过消除低温AlN中间层引入的泄漏路径,增强了Si上AlGaN / GaN异质结FET的电压阻挡能力
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China|Sun Yat Sen Univ, Inst Power Elect & Control Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China|Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China|Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China|Sun Yat Sen Univ, Inst Power Elect & Control Technol, Guangzhou 510275, Guangdong, Peoples R China|Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;
机译:使用AlGaN双异质结限制的AlGaN / GaN HEMT穿通电压增强缩放
机译:使用AlGaN双异质结限制来增强AlGaN / GaN HEMT的穿通电压
机译:使用AlGaN中间层在半绝缘GaN上生长AlGaN / GaN异质结场效应晶体管
机译:具有多个场板的横向AlGaN / GaN异质结FET的击穿电压增强
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压