Stochastic and systematic patterning failure mechanisms for contact-holes in EUV lithography (part 2)

摘要

Patterning uncertainty in EUV lithography arises from each lithographic component: the source, the photomask, the optical system, and the photoresist. All contribute to line roughness and contact disuniformity. In extreme cases, feature variability can result in patterning failures such as line microbridging or random missing contact holes. Historically, redundant contact holes (or vias) were placed to overcome the effects of a missing contact. Due to the aggressive CD shrink of feature size, the use of redundant contacts has been progressively decreased. For some types of devices, almost every contact of the billions found on the chip must be electrically active in order for the device to function. In such scenario, lithographic printing failures may cause catastrophic loss of yield, considering that closed contacts can hardly be corrected by smoothing techniques or etching. In this paper, the minimum contact CD which prints without failure - the contact hole printability limit - is studied for 54nm and 44nm pitch dense arrays. We find that the same resist may show dramatically different printability limits depending upon sizing dose and illumination conditions. This analysis will be implemented to estimate, through simulation-assisted experiments, the required exposure dose and aerial image to safely print sub-30nm contact holes.