1.3 μm whispering gallery modes observed in a Sibased rolled-up InAs/GaAs bilayer quantum dot (BQD) microtube at room-temperature

摘要

We have successfully observed ～1.3 μm whispering gallery modes from a Si-based rolled-up InAs/GaAs bilayer quantum dot (BQD) microtube at room temperature. The BQD microtube is first made by selectively releasing the InGaAs/GaAs strained bilayer from GaAs substrate and then transferred on a SiO_2/Si substrate using substrate-on-substrate transfer technique. Room-temperature microphotoluminescence spectrum features that six sharp and regularly spaced peaks locating in the wavelength range of 1150-1350 nm and the max Q-factor is ～1100 under an excitation power of 230 μW.